Infineon BSP135IXTSA1

Infineon · FETs & Power MOSFETs · MPN BSP135IXTSA1

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Specifications

Gate Charge(Qg)3.7nC@5V
Drain to Source Voltage600V
Output Capacitance(Coss)8.5pF
Current - Continuous Drain(Id)120mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)3.4pF
RDS(on)25Ω@10V
Number1 N-channel
Input Capacitance(Ciss)98pF
TypeN-Channel

Technical details

600V 120mA 1V 1.8W 25Ω@10V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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