Infineon BSP135H6433XTMA1

Infineon · FETs & Power MOSFETs · MPN BSP135H6433XTMA1

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)4.9nC@3V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)120mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)5.1pF
RDS(on)60Ω@0V
Number1 N-channel
Input Capacitance(Ciss)146pF
TypeN-Channel

Technical details

600V 120mA 1V 1.8W 60Ω@0V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS

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