Infineon · FETs & Power MOSFETs · MPN BSP125H6327
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| Gate Charge(Qg) | 6.6nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 12.3pF |
| Current - Continuous Drain(Id) | 120mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.8pF |
| RDS(on) | 45Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 150pF |
| Type | N-Channel |
N-Channel 600V 0.12A 1.8W Surface Mount SOT-223