Infineon BSP 52 E6327

Infineon · Transistors (BJTs) · MPN BSP 52 E6327

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain1000
Pd - Power Dissipation1.5W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.3V

Technical details

80V 1000 NPN 1A SOT-223-4 Single Bipolar Transistors RoHS

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