Infineon BSO613SPV G

Infineon · FETs & Power MOSFETs · MPN BSO613SPV G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Current - Continuous Drain(Id)3.44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)110mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)700pF

Technical details

60V 3.44A 3V 2.5W 110mΩ@10V 1 P-Channel SOP-8 Single FETs, MOSFETs RoHS

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