Infineon · FETs & Power MOSFETs · MPN BSO612CV G
No reviews yet — be the first to review Infineon BSO612CV G.
| Gate Charge(Qg) | 15.5nC@10V;16nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 3A;2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 120mΩ@10V;300mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 340pF;400pF |
60V 4V 2W 1 N-Channel + 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS