Infineon BSO303SP

Infineon · FETs & Power MOSFETs · MPN BSO303SP

No reviews yet — be the first to review Infineon BSO303SP.

Specifications

Gate Charge(Qg)69nC@24V
Drain to Source Voltage30V
Output Capacitance(Coss)465pF
Current - Continuous Drain(Id)8.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.35W
Reverse Transfer Capacitance (Crss@Vds)389pF
RDS(on)21mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.754nF
TypeP-Channel

Technical details

30V 8.9A 2V 2.35W 21mΩ@10V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs

Related FETs & Power MOSFETs