Infineon BSO203P H

Infineon · FETs & Power MOSFETs · MPN BSO203P H

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Specifications

Gate Charge(Qg)39nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.6W
RDS(on)21mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)3.75nF

Technical details

20V 1.6W 21mΩ@4.5V 2 P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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