Infineon · FETs & Power MOSFETs · MPN BSO200P03S H
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| Gate Charge(Qg) | 6.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 9.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.36W |
| Reverse Transfer Capacitance (Crss@Vds) | 580pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.33nF |
30V 9.1A 1.5V 2.36W 20mΩ@10V 1 P-Channel DSO-8 Single FETs, MOSFETs RoHS