Infineon BSO150N03MD G

Infineon · FETs & Power MOSFETs · MPN BSO150N03MD G

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Specifications

Gate Charge(Qg)12.6nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)9.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)12.5mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)970pF
TypeN-Channel

Technical details

N-Channel Array 30V 2W Surface Mount DSO-8

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