Infineon BSO110N03MSG

Infineon · FETs & Power MOSFETs · MPN BSO110N03MSG

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 30V 10A 1.56W Surface Mount DSO-8

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