Infineon BSO080P03S H

Infineon · FETs & Power MOSFETs · MPN BSO080P03S H

No reviews yet — be the first to review Infineon BSO080P03S H.

Specifications

Gate Charge(Qg)136nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)14.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)1.5nF
RDS(on)8mΩ
Number1 P-Channel
Input Capacitance(Ciss)5.89nF

Technical details

30V 14.9A 2.5W Surface Mount DSO-8

Related FETs & Power MOSFETs