Infineon BSO033N03MS G

Infineon · FETs & Power MOSFETs · MPN BSO033N03MS G

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Specifications

Gate Charge(Qg)45nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.6nF

Technical details

30V 22A 2V 2.5W 3.3mΩ@10V 1 N-channel DSO-8 Single FETs, MOSFETs RoHS

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