Infineon BSL316CH6327

Infineon · FETs & Power MOSFETs · MPN BSL316CH6327

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Specifications

Current - Continuous Drain(Id)1.5A
Pd - Power Dissipation500mW
RDS(on)160mΩ@10V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)84pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)282pF
Gate Charge(Qg)600pC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)91pF

Technical details

N-Channel+P-Channel Array 30V 1.5A 0.5W Surface Mount TSOP-6

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