Infineon BSL316C H6327

Infineon · FETs & Power MOSFETs · MPN BSL316C H6327

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)150mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)282pF

Technical details

N-Channel+P-Channel Array 30V 1.4A 0.5W Surface Mount TSOP-6-6-1.5mm

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