Infineon BSL308PEH6327

Infineon · FETs & Power MOSFETs · MPN BSL308PEH6327

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Specifications

Gate Charge(Qg)5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)196pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)62mΩ@10V
Number2 P-Channel
Input Capacitance(Ciss)376pF
TypeP-Channel

Technical details

P-Channel 30V 2A 500mW Surface Mount TSOP-6

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