Infineon BSL308PE H6327

Infineon · FETs & Power MOSFETs · MPN BSL308PE H6327

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Specifications

Current - Continuous Drain(Id)2A
Pd - Power Dissipation500mW
RDS(on)80mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)18pF
Number2 P-Channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)5nC@10V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 2A 0.5W Surface Mount TSOP-6

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