Infineon BSL211SPH6327

Infineon · FETs & Power MOSFETs · MPN BSL211SPH6327

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)12.4nC@10V
Current - Continuous Drain(Id)4.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2W
RDS(on)67mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)654pF

Technical details

P-Channel 20V 4.7A 2W Surface Mount TSOP-6

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