Infineon · FETs & Power MOSFETs · MPN BSL211SP H6327
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| Gate Charge(Qg) | 12.4nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 197pF |
| RDS(on) | 67mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 654pF |
20V 4.7A 2W Surface Mount TSOP-6