Infineon · FETs & Power MOSFETs · MPN BSG0813NDI
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 50A |
| RDS(on) | 1.2mΩ@4.5V |
| Pd - Power Dissipation | 6.25W |
| Gate Threshold Voltage (Vgs(th)) | - |
| Drain to Source Voltage | 25V |
| Reverse Transfer Capacitance (Crss@Vds) | 71pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.1nF |
| Gate Charge(Qg) | 8.4nC@12V |
| Operating Temperature | -55℃~+150℃ |
50A 1.2mΩ@4.5V 6.25W 2 N-Channel TISON8-4-EP(6x5) FET, MOSFET Arrays RoHS