Infineon · FETs & Power MOSFETs · MPN BSG0812NDATMA1
No reviews yet — be the first to review Infineon BSG0812NDATMA1.
| Output Capacitance(Coss) | 390pF;1.4nF |
|---|---|
| Pd - Power Dissipation | 6.25W |
| Drain to Source Voltage | 25V |
| Configuration | - |
| Gate Charge(Qg) | 5.6nC;2nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF;130pF |
| RDS(on) | 2.8mΩ@10V;0.8mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 780pF;2.7nF |
6.25W 25V 1.6V 2 N-Channel N-Channel PG-TISON8-4 Single FETs, MOSFETs RoHS