Infineon · FETs & Power MOSFETs · MPN BSG0811NDATMA1
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| Current - Continuous Drain(Id) | 50A |
|---|---|
| Pd - Power Dissipation | 6.25W |
| RDS(on) | 3.2mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 25V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 3.7nF |
| Gate Charge(Qg) | 8.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 1.9nF |
N-Channel Array 25V 50A 6.25W Surface Mount TISON-8