Infineon · FETs & Power MOSFETs · MPN BSG0810NDIATMA1
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| Current - Continuous Drain(Id) | 50A |
|---|---|
| Pd - Power Dissipation | 6.25W |
| RDS(on) | 4mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 25V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 3.1nF |
| Gate Charge(Qg) | 25nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 1.9nF |
50A 6.25W 4mΩ@4.5V 2V 2 N-Channel TISON-8 FET, MOSFET Arrays RoHS