Infineon BSF110N06NT3GXUMA1

Infineon · FETs & Power MOSFETs · MPN BSF110N06NT3GXUMA1

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)46nC@10V
Output Capacitance(Coss)1.06nF
Current - Continuous Drain(Id)47A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.7nF
TypeN-Channel

Technical details

60V 47A 4V 38W 11mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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