Infineon · FETs & Power MOSFETs · MPN BSD840NH6327
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| Current - Continuous Drain(Id) | 880mA |
|---|---|
| Pd - Power Dissipation | 500mW |
| RDS(on) | 400mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 750mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 78pF |
| Gate Charge(Qg) | 260pC@2.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 36pF |
N-Channel Array 20V 0.88A 0.5W Surface Mount SC-70-6(SOT-363)