Infineon · FETs & Power MOSFETs · MPN BSD816SN L6327
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 600pC@2.5V |
| Output Capacitance(Coss) | 67pF |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 240mΩ@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
| Type | N-Channel |
20V 1.4A 950mV 500mW 240mΩ@1.8V 1 N-channel N-Channel SOT-363-6 Single FETs, MOSFETs RoHS