Infineon · FETs & Power MOSFETs · MPN BSD316NL6327
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 600pC@5V |
| Current - Continuous Drain(Id) | 1.4A |
| Output Capacitance(Coss) | 35pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 280mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Input Capacitance(Ciss) | 94pF |
| Type | N-Channel |
30V 1.4A 2V 500mW 280mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS