Infineon BSD316NL6327

Infineon · FETs & Power MOSFETs · MPN BSD316NL6327

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)600pC@5V
Current - Continuous Drain(Id)1.4A
Output Capacitance(Coss)35pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation500mW
RDS(on)280mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)7pF
Input Capacitance(Ciss)94pF
TypeN-Channel

Technical details

30V 1.4A 2V 500mW 280mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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