Infineon · FETs & Power MOSFETs · MPN BSD235N H6327
No reviews yet — be the first to review Infineon BSD235N H6327.
| Gate Charge(Qg) | 320pC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 950mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| RDS(on) | 350mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 63pF |
N-Channel Array 20V 0.95A 0.5W Surface Mount SOT-363