Infineon · FETs & Power MOSFETs · MPN BSD235CH6327
No reviews yet — be the first to review Infineon BSD235CH6327.
| Current - Continuous Drain(Id) | 950mA |
|---|---|
| RDS(on) | 1.2Ω@4.5V |
| Pd - Power Dissipation | 500mW |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 47pF |
| Gate Charge(Qg) | 400pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 24pF |
N-Channel+P-Channel Array 20V 0.95A 0.5W Surface Mount SOT-363