Infineon · FETs & Power MOSFETs · MPN BSD223PH6327
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| Gate Charge(Qg) | 620pC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 390mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 250mW |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 1.2Ω@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 56pF |
P-Channel 20V 0.39A 0.25W Surface Mount SOT-363