Infineon · FETs & Power MOSFETs · MPN BSD214SNL6327
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 800pC@5V |
| Output Capacitance(Coss) | 62pF |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 250mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 143pF |
| Type | N-Channel |
20V 1.5A 1.2V 500mW 250mΩ@2.5V 1 N-channel N-Channel SOT-363-6 Single FETs, MOSFETs RoHS