Infineon · FETs & Power MOSFETs · MPN BSD214SN H6327
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| Gate Charge(Qg) | 800pC@5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 140mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 143pF |
20V 1.5A 1.2V 500mW 140mΩ@4.5V 1 N-channel SOT-363-6 Single FETs, MOSFETs RoHS