Infineon · FETs & Power MOSFETs · MPN BSC900N20NS3 G
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| Gate Charge(Qg) | 11.6nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 15.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF |
| RDS(on) | 90mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
200V 15.2A 4V 62.5W 90mΩ@10V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS