Infineon BSC889N03LSG

Infineon · FETs & Power MOSFETs · MPN BSC889N03LSG

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Specifications

Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)16nC@10V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

30V 45A 2.2V 28W 9mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS

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