Infineon BSC884N03MSG

Infineon · FETs & Power MOSFETs · MPN BSC884N03MSG

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage34V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)5.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.7nF

Technical details

34V 85A 2V 50W 5.4mΩ@4.5V 1 N-channel TDSON-8 Single FETs, MOSFETs RoHS

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