Infineon BSC883N03MSG

Infineon · FETs & Power MOSFETs · MPN BSC883N03MSG

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage34V
Output Capacitance(Coss)940pF
Current - Continuous Drain(Id)98A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)4.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

34V 98A 2V 57W 4.6mΩ@4.5V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS

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