Infineon BSC600N25NS3G

Infineon · FETs & Power MOSFETs · MPN BSC600N25NS3G

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)149pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF
TypeN-Channel

Technical details

N-Channel 250V 25A 125W Surface Mount TDSON-8

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