Infineon BSC500N20NS3GATMA1

Infineon · FETs & Power MOSFETs · MPN BSC500N20NS3GATMA1

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.58nF

Technical details

N-Channel 200V 24A 96W Surface Mount TDSON-8

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