Infineon BSC440N10NS3 G

Infineon · FETs & Power MOSFETs · MPN BSC440N10NS3 G

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Specifications

Output Capacitance(Coss)120pF
Pd - Power Dissipation29W
Configuration-
Gate Charge(Qg)8.1nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)44mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)610pF

Technical details

29W 100V 2.7V 44mΩ@10V 1 N-channel N-Channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS

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