Infineon · FETs & Power MOSFETs · MPN BSC430N25NSFD
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 43mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.68nF |
250V 36A 4V 214W 43mΩ@10V 1 N-channel TSON-8 Single FETs, MOSFETs RoHS