Infineon BSC430N25NSFD

Infineon · FETs & Power MOSFETs · MPN BSC430N25NSFD

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)43mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.68nF

Technical details

250V 36A 4V 214W 43mΩ@10V 1 N-channel TSON-8 Single FETs, MOSFETs RoHS

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