Infineon BSC350N20NSFD

Infineon · FETs & Power MOSFETs · MPN BSC350N20NSFD

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)182pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)5.4pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.41nF
TypeN-Channel

Technical details

N-Channel 200V 35A 150W Surface Mount TDSON-8(5x6)

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