Infineon BSC320N20NS3G

Infineon · FETs & Power MOSFETs · MPN BSC320N20NS3G

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF

Technical details

N-Channel 200V 36A 125W Surface Mount TDSON-8(5x6)

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