Infineon BSC265N10LSF G

Infineon · FETs & Power MOSFETs · MPN BSC265N10LSF G

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Specifications

Configuration-
Gate Charge(Qg)21nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)36mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

N-Channel 100V 40A 78W Surface Mount TDSON-8(5x6)

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