Infineon · FETs & Power MOSFETs · MPN BSC252N10NSF G
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| RDS(on) | 25.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
100V 40A 78W Surface Mount TDSON-8(5x6)