Infineon · FETs & Power MOSFETs · MPN BSC22DN20NS3 G
No reviews yet — be the first to review Infineon BSC22DN20NS3 G.
| Gate Charge(Qg) | 5.6nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.1pF |
| RDS(on) | 225mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 430pF |
200V 7A 4V 34W 225mΩ@10V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS