Infineon BSC200P03LSG

Infineon · FETs & Power MOSFETs · MPN BSC200P03LSG

No reviews yet — be the first to review Infineon BSC200P03LSG.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)48.5nC
Output Capacitance(Coss)757pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)690pF
RDS(on)20mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.43nF
TypeP-Channel

Technical details

30V 50A 1V 63W 20mΩ@10V 1 P-Channel P-Channel TDSON-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs