Infineon · FETs & Power MOSFETs · MPN BSC196N10NSGATMA1
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 19.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.3nF |
100V 45A 4V 78W 19.6mΩ@10V 1 N-channel TDSON-8 Single FETs, MOSFETs RoHS