Infineon · FETs & Power MOSFETs · MPN BSC16DN25NS3G
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| Gate Charge(Qg) | 11.4nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 59pF |
| Current - Continuous Drain(Id) | 10.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 165mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
| Type | N-Channel |
250V 10.9A 4V 62.5W 165mΩ@10V 1 N-channel N-Channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS