Infineon BSC150N03LDGATMA1

Infineon · FETs & Power MOSFETs · MPN BSC150N03LDGATMA1

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Specifications

Current - Continuous Drain(Id)20A
Pd - Power Dissipation26W
RDS(on)15mΩ@10V
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)16pF
Number2 N-Channel
Input Capacitance(Ciss)1.1nF
Gate Charge(Qg)13.2nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)470pF

Technical details

N-Channel Array 30V 20A 26W Surface Mount TDSON-8

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