Infineon BSC13DN30NSFD

Infineon · FETs & Power MOSFETs · MPN BSC13DN30NSFD

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage300V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)16A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)5.4pF
RDS(on)130mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.45nF
TypeN-Channel

Technical details

N-Channel 300V 16A 150W Surface Mount TDSON-8(5x6)

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